Ryzen 7 7700X physical photos first exploded, Samsung's eighth-generation V-NAND flash memory is about to come out

time:2023-01-27 19:45:27 source:scripttoolbox.com author:A main board
Ryzen 7 7700X physical photos first exploded, Samsung's eighth-generation V-NAND flash memory is about to come out

The first physical photos of the Ryzen 7 7700X are exposed: AMD will release the Ryzen 7000 processor on August 30, and the physical photos of the Ryzen 7 7700X have just been exposed online. From the appearance, this processor is very close to the retail version, and the letter D at the bottom means that it belongs to the evaluation sample. The Ryzen 7 7700X has 8 cores and 16 threads, a maximum acceleration frequency of 5.4GHz, and a TDP of 105 watts. AMD will announce its price on August 30. There is no 7800X in the Ryzen 7000 launch lineup, and AMD may launch the Ryzen 7 7800X3D with 3D V-Cache by the end of the fourth quarter. Samsung V-NAND V8 is coming: According to Korean media reports, Samsung may start production of the eighth-generation V-NAND flash memory later this year. There is also news that Samsung plans to open a new R&D center this month to develop more advanced NAND flash memory products. Regarding the specific stacking layers of the eighth-generation V-NAND flash memory, it is basically 200+ layers at present, but the specific number is doubtful. Business Korea last year thought it would be 228-layer stacking, and now it has been revised to 236 layers. Analysts at TechInsights believe that Samsung's eighth-generation V-NAND has a 236-layer stack. There is an error in the table below, and the contents of the last two lines are written backwards. According to the TechInsights report, the eighth-generation V-NAND will have higher storage density, but it will still use the 4-plane design instead of the 6-plane design like Micron's next-generation B58R flash memory. Compared with its own seventh-generation V-NAND, Samsung's eighth-generation V-NAND has backward read latency and write bandwidth, but Samsung may also introduce a better-performing 512Gb die variant. The new generation of flash memory will support an I/O rate of 2400MT/s, which can better meet the read and write bandwidth requirements of PCIe 5.0 SSDs.

(Responsible editor:Notebook computer)

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